Herbert Wertheim College of Engineering
Anderson Research Group
Led by Travis Anderson · Chemical Engineering
What we study
The lab studies semiconductor devices, focusing on material properties and electrical behavior. They develop new processes to improve performance in extreme environments using materials like SiC, GaN, and Ga2O3.
What working here is like
- Building & testing
- Wet lab
- Papers
- 5
Recent papers, explained
- Photoluminescence Imaging for Defect Mapping and Quality Control of Al-Polar AlN Substrates
2026 · ECS Journal of Solid State Science and Technology
Uses light to map defects in aluminum nitride crystals.
- Effects of Gamma Irradiation on Electrical Characteristics and Carrier Dynamics in Diamond Schottky and Heterojunction Devices
2026 · ECS Journal of Solid State Science and Technology
Tests how gamma radiation changes diamond device electrical properties.
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- Influence of Ion LET and Epitaxial Thickness on Single-Event Effects in Homojunction GaN Vertical Diodes
2026 · IEEE Transactions on Nuclear Science
Shows how ion LET and GaN diode thickness affect single-event effects.
- Determination of band offsets at the interfaces of NiO and Cr2O3 with InAlN
2026 · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
Measures band offsets in NiO and Cr2O3 with InAlN using XPS.
- Observation and analysis of nine orders of magnitude memory window in pn GaN regrowth vertical diodes
2026 · Applied Physics Letters
Finds GaN diodes with a huge memory window after regrowth.
Plain-language summaries are AI-written and reviewed by us; check the paper for details.
How to reach out
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